UV scanning photoluminescence spectroscopy is applied to 4H-SiC epitaxy
characterization. In a first part, the technique is used for triangular defects
characterization. The results show that two kinds of defects are present. Some
defects are inclusion of cubic SiC which is confirmed by Raman spectroscopy.
The other ones consist of staking faults of different thicknesses acting as
quantum wells. In a second part, the effective lifetime profile is mapped for a
whole 50 mm epitaxy using the variation of room temperature PL intensity
versus excitation intensity.